# Questions & Answers of MOSFET - LED

Question No. 6

At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is

The drain current of a MOSFET in saturation is given by  ${I}_{\mathit{D}}=K{\left({\mathit{V}}_{\mathit{G}\mathit{S}}\mathit{-}{\mathit{V}}_{\mathit{T}}\right)}^{2}\phantom{\rule{0ex}{0ex}}$ where K is a constant. The magnitude of the transconductance gm is