GATE Questions & Answers of MOSFET

What is the Weightage of MOSFET in GATE Exam?

Total 3 Questions have been asked from MOSFET topic of Electronic Devices subject in previous GATE papers. Average marks 1.33.

At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is

Consider the following two statements about the internal conditions in an n-channel MOSFET operating in the active region
             S1: The inversion charge decreases from source to drain
             S2: The channel potential increases from source to drain
Which of the following is correct?

The drain current of a MOSFET in saturation is given by  ID=KVGS-VT2 where K is a constant. The magnitude of the transconductance gm is