# GATE Questions & Answers of MOSFET

## What is the Weightage of MOSFET in GATE Exam?

Total 3 Questions have been asked from MOSFET topic of Electronic Devices subject in previous GATE papers. Average marks 1.33.

At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is

The drain current of a MOSFET in saturation is given by  ${I}_{\mathit{D}}=K{\left({\mathit{V}}_{\mathit{G}\mathit{S}}\mathit{-}{\mathit{V}}_{\mathit{T}}\right)}^{2}\phantom{\rule{0ex}{0ex}}$ where K is a constant. The magnitude of the transconductance gm is