Questions & Answers of Integrated Circuits Fabrication Process: Oxidation, Diffusion, Ion Implantation, Photolithography, Twin-Tub CMOS Process

Question No. 5

In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces

Question No. 50

In the three dimensional view of a silicon n-channel MOS transistor shown below, δ= 20 nm. The transistor is of width 1 μm. The depletion width formed at every p-n junction is 10 nm. The relative permittivities of Si and SiO2, respectively, are 11.7 and 3.9, and ε0 = 8.9 × 10-12 F/m.

The gate-source overlap capacitance is approximately