The load current I_{0} through R_{L} is
The number of times the LED glows is ________
The value of R_{2} (in Ω) for which I_{2}=100 μA is ________
The steady state magnitude of the capacitor voltage V_{C} (in volts) is ______
The value of the ripple u (in volts) is ________
In the opamp circuit shown, the Zener diodes Z1 and Z2 clamp the output voltage V_{0} to +5 V or −5 V. The switch S is initially closed and is opened at time t=0.
The time t=t_{1} (in seconds) at which V_{0} changes state is ________
The output voltage (in millivolts) is ________
For the circuit with ideal diodes shown in the figure, the shape of the output (V_{out}) for the given sine wave input (V_{in}) will be
In the circuit shown, assume that the opamp is ideal. The bridge output voltage V_{0} (in mV) for $\delta $ = 0.05 is ____.
The circuit shown in the figure has an ideal opamp. The oscillation frequency and the condition to sustain the oscillations, respectively, are
In the circuit shown, I_{1} = 80 mA and I_{2} = 4mA. Transistors T_{1} and T_{2} are identical. Assume that the thermal voltage V_{T} is 26 mV at 27^{o}C. At 50^{o}C, the value of the voltage V_{12} = V_{1} –V_{2} (in mV) is _____.
If the circuit shown has to function as a clamping circuit, then which one of the following conditions should be satisfied for the sinusoidal signal of period T ?
In the circuit shown, V_{O}=V_{OA} for switch SW in position A and V_{0}=V_{OB} for SW in position B. Assume that the opamp is ideal. The value of $\frac{{V}_{OB}}{{V}_{OA}}$ is ___________.
1.5
In the bistable circuit shown, the ideal opamp has saturation levels of $\pm $ 5 V. The value of R_{1}(in kΩ) that gives a hysteresis width of 500 mV is _________
The diode in the circuit given below has V_{ON} = 0.7 V but is ideal otherwise. The current (in mA) in the 4 k Ω resistor is
Assuming that the opamp in the circuit shown below is ideal, the output voltage V_{0} (in volts)
For the voltage regulator circuit shown, the input voltage (V_{in}) is 20 V ± 20% and the regulated output voltage (V_{out}) is 10 V. Assume the opamp to be ideal. For a load R_{L} drawing 200 mA, the maximum power dissipation in Q_{1} (in Watts) is __________.
In the ac equivalent circuit shown, the two BJTs are biased in active region and have identical parameters with β > > 1. The open circuit small signal voltage gain is approximately _____.
In the circuit shown in the figure, the BJT has a current gain ($\beta $) of 50. For an emitter-base voltage V_{EB} = 600 mV, the emitter-collector voltage V_{EC} (in Volts) is _____.
In the circuit shown using an ideal opamp, the 3-dB cut-off frequency (in Hz) is _____.
In the circuit shown, assume that diodes D_{1} and D_{2} are ideal. In the steady state condition, the average voltage V_{ab} (in Volts) across the 0.5μF capacitor is _____.
In the circuit shown, assume that the opamp is ideal. If the gain (V_{o}/V_{in}) is –12, the value of R (in kΩ) is ____.
In the circuit shown, both the enhancement mode NMOS transistors have the following characteristics: ${k}_{n}={\mu}_{n}{C}_{ox}\left(W/L\right)=1mA/{V}^{2};{V}_{TN}=1V$. Assume that the channel length modulation parameter $\lambda $ is zero and body is shorted to source. The minimum supply voltage V_{DD} (in volts) needed to ensure that transistor M_{1} operates in saturation mode of operation is _____.
In the circuit shown, assume that the diodes D_{1} and D_{2} are ideal. The average value of voltage V_{ab} (in Volts), across terminals ‘a’ and ‘b’ is ______.
A good current buffer has
In the ac equivalent circuit shown in the figure, if i_{in} is the input current and R_{F} is very large, the type of feedback is
In the low-pass filter shown in the figure, for a cut-off frequency of 5 kHz , the value of R_{2} (in kΩ) is _____________.
In the following circuit employing pass transistor logic, all NMOS transistors are identical with a threshold voltage of 1 V. Ignoring the body-effect, the output voltages at P, Q and R are,
In the voltage regulator circuit shown in the figure, the op-amp is ideal. The BJT has V_{BE} = 0.7 V and β = 100, and the zener voltage is 4.7 V. For a regulated output of 9 V, the value of R (in Ω) is _______.
In the circuit shown, the op-amp has finite input impedance, infinite voltage gain and zero input offset voltage. The output voltage V_{OUT} is
For the amplifier shown in the figure, the BJT parameters are V_{BE} = 0.7 V, β = 200, and thermal voltage V_{T} = 25 mV. The voltage gain (v_{o}/v_{i}) of the amplifier is _______
.
The feedback topology in the amplifier circuit ( the base bias circuit is not shown for simplicity) in the figure is
In the differential amplifier shown in the figure, the magnitudes of the common-mode and differential-mode gains are A_{cm} and A_{d}, respectively. If the resistance R_{E} is increased, then
The desirable characteristics of a transconductance amplifier are
In the circuit shown, the PNP transistor has $\left|{V}_{BE}\right|=0.7\mathrm{V\; and}$ $\mathrm{\beta}=50$ Assume that ${R}_{B}=100k\Omega $For V_{0} to be 5 V, the value of R_{C} (in K$\Omega $) is _______
The figure shows a half-wave rectifier. The diode D is ideal. The average steady-state current (in Amperes) through the diode is approximately ____________.
In the circuit shown, the silicon BJT has β = 50. Assume V_{BE} =0.7 V and V_{CE(sat)}= 0.2 V. Which one of the following statements is correct?
Assuming that the Op-amp in the circuit shown is ideal, V_{o} is given by
If the emitter resistance in a common-emitter voltage amplifier is not bypassed, it will
Two silicon diodes, with a forward voltage drop of 0.7 V, are used in the circuit shown in the figure. The range of input voltage V_{i } for which the output voltage V_{o}=V_{i}, is
The circuit shown represents
Consider the common-collector amplifier in the figure (bias circuitry ensures that the transistor operates in forward active region, but has been omitted for simplicity). Let I_{C} be the collector current, V_{BE} be the base-emitter voltage and V_{T} be the thermal voltage. Also, g_{m} and r_{o} are the small-signal transconductance and output resistance of the transistor, respectively. Which one of the following conditions ensures a nearly constant small signal voltage gain for a wide range of values of R_{E}?
For the common collector amplifier shown in the figure, the BJT has high β, negligible V_{CE(sat)}, and V_{BE} = 0.7 V. The maximum undistorted peak-to-peak output voltage v_{o} (in Volts) is _______.
In the circuit shown below what is the output voltage (V_{out}) if a silicon transistor Q and an ideal op-amp are used?
In a voltage-voltage feedback as shown below, which one of the following statements is TRUE if the gain k is increased?
In a MOSFET operating in the saturation region, the channel length modulation effect causes
In the circuit shown below, the knee current of the ideal Zener diode is 10 mA. To maintain 5 V across R_{L}, the minimum value of R_{L} in $\Omega $ and the minimum power rating of the Zener diode in mW, respectively, are
The small-signal resistance (i.e., dV_{B}/dI_{D}) in k $\Omega $ offered by the n-channel MOSFET M shown in the figure below, at a bias point of V_{B} = 2 V is (device data for M: device transconductance parameter k_{N} = ${\mu}_{n}{C}_{\mathrm{o}x}^{\text{'}}(W/L)=40\mu A{V}^{2}$, threshold voltage V_{TN} = 1 V, and neglect body effect and channel length modulation effects)
The ac schematic of an NMOS common-source stage is shown in the figure below, where part of the biasing circuits has been omitted for simplicity. For the n -channel MOSFET M, the transconductance g_{m} = 1 mA/V, and body effect and channel length modulation effect are to be neglected. The lower cutoff frequency in Hz of the circuit is approximately at
In the circuit shown below the op-amps are ideal. Then V_{out} in Volts is
A voltage 1000 $\mathrm{sin}\omega t$ Volts is applied across YZ. Assuming ideal diodes, the voltage measured across WX in Volts, is
In the circuit shown below, the silicon npn transistor Q has a very high value of $\beta $ . The required value of R_{2 }in k$\Omega $ to produce I_{C} = 1 mA is
The current i_{b} through the base of a silicon npn transistor is 1+0.1 cos(10000$\pi t$) mA. At 300 K, the r_{$\pi $} in the small signal model of the transistor is
The diodes and capacitors in the circuit shown are ideal. The voltage v(t) across the diode D1 is
In the CMOS circuit shown, electron and hole mobilities are equal, and M1 and M2 are equally sized. The device M1 is in the linear region if