Electronics and Communication Engg - GATE 2006 Paper Solution

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The rank of the matrix

1111-10111 is:

(A) 0
(B) 1
(C) 2
(D) 3

××P,, where P is a vector, is equal to

(A) P××P-2P
(B) 2P+.P
(C) 2P+×P;
(D) .P-2P

?×P.ds,where P is a vector, is equal to

 
 
 
 

 

A probability density function is of the form

px=Ke-αx,x-,

The value of K is

(A) 0.5 (B) 1
(C) 0.5α (D) α

A solution for the differential equation

x.t+2xt=δt

with initial condition x (0 −) = 0 is:

(A) e-2tut (B) e2tut
(C) e-tut (D) etut

A low-pass filter having a frequency response Hjω=Aωej?ω does not produce any phase distortion if

(A) Aω=Cω2,ϕω=Kω3 (B) Aω=Cω2,ϕω=Kω
(C) Aω=Cω,ϕω=Kω2 (D) Aω=C,ϕω=Kω-1

The values of voltage (VD )  across a tunnel-diode corresponding to peak and valley currents are and VP and VV respectively. The range of tunnel-diode voltage VD for which the slope of its I-VD characteristics is negative would be

(A) VD <0 (B) 0VD<VP
(C) VPVD<VV (D) VD>VV

The concentration of minority carriers in an extrinsic semiconductor under equilibrium is:

(A) directly proportional to the doping concentration
(B) inversely proportional to the doping concentration
(C) directly proportional to the intrinsic concentration
(D) inversely proportional to the intrinsic concentration

Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the

(A) diffusion current (B) drift current (C) recombination current (D) induced current

The phenomenon known as “Early Effect” in a bipolar transistor refers to a reduction of the effective base-width caused by

(A) electron-hole recombination at the base
(B) the reverse biasing of the base-collector junction
(C) the forward biasing of emitter-base junction
(D) the early removal of stored base charge during saturation-to-cutoff switching.

The input impedance (Zi )  and the output impedance ( Zo)  of an ideal transconductance (voltage controlled current source) amplifier are

(A)Zi=0,Z0=0
(B) Zi=0,Z0=
(C) Zi=,Z0=0
(D) Zi=,Z0=

An n-channel depletion MOSFET has following two points on its ID-VGS  curve:

(i) VGS=0 at ID=12MA and

(ii) VGS=-6  at ID=0

Which of the following Q-points will give the highest trans-conductance gain for small signals

(A) VGS=-6  Volts
(A) VGS=-3  Volts
(C) VGS=0  Volts
(D) VGS=3  Volts

The number of product terms in the minimized sum-of-product expression obtained through the following K-map is (where “d” denotes don’t care states)

1 0 0 1
0 d 0 0
0 0 d 1
1 0 0 1
(A) 2 (B) 3 (C) 4 (D) 5

Let xt xjω be Fourier Transform pair. The Fourier Transform of the signal x (5t − 3) in terms of X ( jw ) is given as

(A) 15e-j3ω5Xjω5
(B) 15ej3ω5Xjω5
(C) 15e-j3ωXjω5
(D) 15ej3ωXjω5

The Dirac delta function δt is defined as

(A) δt=1t=00otherwise
(B) δt=t=00otherwise
(C) δt=1t=00otherwiseand -δt dt=1
(D) δt=t=00otherwiseand -δt dt=1

If the region of convergence of x1n+x2n is 13<z<23, then the region of convergence of xnn-x2n includes

(A) 13<z<3
(B) 23<z<3
(C) 32<z<3
(D) 13<z<23

The open-loop transfer function of a unity-gain feedback control system is given by

Gs=Ks+1s+2

The gain margin of the system in dB is given by

(A) 0 (B) 1 (C) 20 (D)

In the system shown below, x (t ) = (sint )u (t ). In steady-sate, the response y (t )will be:

(A) 12sint-π4
(B) 12sint+π4
(C) 12e-tsint
(D) sint-cost

The electric field of an electromagnetic wave propagating in the positive zdirection is given by

E=a?xsinωt-βz+a?y sinωt-βz+a?y sinωt-βz+π2.

The wave is

(A) linearly polarized in the z-direction
(B) elliptically polarized
(C) left-hand circularly polarized
(D) right-hand circularly polarized

A transmission line is feeding 1 Watt of power to a horn antenna having a gain of 10 dB. The antenna is matched to the transmission line. The total power radiated by the horn antenna into the free-space is:

(A) 10 Watts (B) 1 Watt (C) 0.1 Watt (D) 0.01 Watt

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