GATE Papers >> ECE >> 2017 >> Question No 36

Question No. 36 ECE | GATE 2017

The dependence of draft velocity of electrons field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of =1 × 1016 cm-3 and electronic charge =1.6 × 10-19 C. If a bias of 5 V is applied across a 1 µm region of this semiconductor, the resulting current density in this region, in kA/cm2, is____________.

 


Answer : 1.5 to 1.7


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