ECE GATE 2017 Question No 111 Analog Circuits

Question No. 111 ECE | GATE 2017

Consider an n-channel MOSFET having width W, length L, electron mobility in the channel µ_n and oxide capacitance per unit area C_ox. If gate-to-source voltage V_GS = 0.7 V, drain-to-source voltage V_DS = 0.1 V, (µ_n C_ox) = 100 µA/V², threshold voltage V_TH = 0.3 V and (W/ L) = 50, then the transconductance g_m(in mA/V) is_________.

Answer : 0.45 to 0.55

GATE 2017 ECE Analog Circuits BJTs and MOSFETs

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GATE Papers >> ECE >> 2017 >> Question No 111

Answer : 0.45 to 0.55

Questions of BJTs and MOSFETs

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