GATE Papers >> ECE >> 2017 >> Question No 111

Question No. 111 ECE | GATE 2017

Consider an n-channel MOSFET having width W, length L, electron mobility in the channel µn and oxide capacitance per unit area Cox. If gate-to-source voltage VGS = 0.7 V, drain-to-source voltage VDS = 0.1 V, (µn Cox) = 100 µA/V2, threshold voltage VTH = 0.3 V and (W/ L) = 50, then the transconductance gm(in mA/V) is_________.


Answer : 0.45 to 0.55


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