GATE Papers >> ECE >> 2015 >> Question No 20

Question No. 20 ECE | GATE 2015

A silicon sample is uniformly doped with donor type impurities with a concentration of 1016/cm3. The electron and hole mobilities in the sample are 1200 cm2/V-s and 400 cm2/V-s respectively. Assume complete ionization of impurities. The charge of an electron is 1.6 X 10-19 C. The resistivity of the sample (in Ω-cm) is _______.


Answer : 0.50 to 0.54


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