GATE Papers >> ECE >> 2014 >> Question No 118

Question No. 118 ECE | GATE 2014

A silicon bar is doped with donor impurities ND = 2.25 x 1015 atoms / cm3. Given the intrinsic carrier concentration of silicon at T = 300 K is ni = 1.5 x 1010 cm-3. Assuming complete impurity ionization, the equilibrium electron and hole concentrations are


Answer : (D) n0 = 2.25 x 1015 cm-3, p0 = 1 x 105 cm-3


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