GATE Papers >> ECE >> 2013 >> Question No 34

Question No. 34 ECE | GATE 2013

The small-signal resistance (i.e., dVB/dID) in k Ω offered by the n-channel MOSFET M shown in the figure below, at a bias point of VB = 2 V is (device data for M: device transconductance parameter kN = μnCox'(W/L)=40μAV2, threshold voltage VTN = 1 V, and neglect body effect and channel length modulation effects)


Answer : (B) 25


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