GATE Papers >> ECE >> 2011 >> Question No 48

Question No. 48 ECE | GATE 2011

The channel resistance of an N-channel JFET shown in the figure below is 600 Ω when the full channel thickness (tch) of 10μm is available for conduction. The built-in voltage of the gate P+ N junction (Vbi) is -1 V. When the gate to source voltage (VGS) is 0 V, the channel is depleted by 1μm on each side due to the builtin voltage and hence the thickness available for conduction is only 8μm

The channel resistance when VGS = 0 V is


Answer : (C) 750Ω


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